A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These on species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
申请公布号
US2012145918(A1)
申请公布日期
2012.06.14
申请号
US20100965419
申请日期
2010.12.10
申请人
RADOVANOV SVETLANA;GODET LUDOVIC;HATEM CHRISTOPHER R.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人
RADOVANOV SVETLANA;GODET LUDOVIC;HATEM CHRISTOPHER R.