发明名称 |
Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same |
摘要 |
A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer. |
申请公布号 |
US2012146016(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113109435 |
申请日期 |
2011.05.17 |
申请人 |
PARK JAE-CHUL;KIM CHANG-JUNG;KIM SANG-WOOK;KIM SUN-IL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JAE-CHUL;KIM CHANG-JUNG;KIM SANG-WOOK;KIM SUN-IL |
分类号 |
H01L31/08;H01L31/0264;H01L31/0272;H01L31/0296;H01L31/18 |
主分类号 |
H01L31/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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