| 摘要 |
PURPOSE: A method for manufacturing high purity poly crystal silicon is provided to reduce manufacturing costs by extracting and collecting pure iodine from solid and liquid iodine compound wastes. CONSTITUTION: An iodic gas generating unit(100) generates iodic gas by heating a solid iodine. A 4 silicon iodide gas generating unit(200) generates 4 silicon iodide gas by making the iodic gas react to the first metal silicon which is heated. A 4 silicon iodide liquid generating unit(300) generates 4 silicon iodide liquid by reducing the temperature of the 4 silicon iodide liquid. A refining unit(400) generates the refined 4 silicon iodide liquid. A silicon separating unit(600) separates high purity poly crystal silicon by making 2 silicon iodide gas react to a silicon seed.
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