| 摘要 |
The power device with low parasitic transistor comprises a recessed transistor and a heavily doped region at a side of a source region of the recessed transistor. The conductive type of the heavily doped region is different from that of the source region. In addition, a contact plug contacts the heavily doped region and connects the heavily doped region electrically. A source wire covers and contacts the source region and the contact plug to make the source region and the heavily doped region have the same electrical potential. |
