发明名称 Packaged RF transistor with special supply voltage leads
摘要 <p>The invention relates to a packaged RF transistor (501) with distinct output leads. While a first lead (RF lead) is used for providing an RF output signal, a second lead (Extra lead) is used for applying a supply voltage to the RF transistor. The output (drain) of the RF transistor is connected to these leads via bond wires (505,506). In order to improve the RF decoupling, a transmission line is used for providing the supply voltage, wherein the transmission line may comprise a pair of parallel conductors.</p>
申请公布号 EP2463905(A1) 申请公布日期 2012.06.13
申请号 EP20100252098 申请日期 2010.12.10
申请人 NXP B.V. 发明人 BLEDNOV, IGOR;VOLOKHINE, IOURI
分类号 H01L23/66;H03F1/42 主分类号 H01L23/66
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