发明名称 |
Methods of self-aligned growth of chalcogenide memory access device |
摘要 |
Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.
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申请公布号 |
US8198124(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100652576 |
申请日期 |
2010.01.05 |
申请人 |
GREELEY NEIL;SRINIVASAN BHASKAR;SANDHU GURTEJ;SMYTHE JOHN;MICRON TECHNOLOGY, INC. |
发明人 |
GREELEY NEIL;SRINIVASAN BHASKAR;SANDHU GURTEJ;SMYTHE JOHN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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