发明名称 |
Laser diodes comprising QWI output window and waveguide areas and methods of manufacture |
摘要 |
In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed. |
申请公布号 |
US8198112(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100760092 |
申请日期 |
2010.04.14 |
申请人 |
CHANG CHWAN-YANG;CHEN CHIEN-CHIH;HU MARTIN HAI;NGUYEN HONG KY;ZAH CHUNG-EN;CORNING INCORPORATED |
发明人 |
CHANG CHWAN-YANG;CHEN CHIEN-CHIH;HU MARTIN HAI;NGUYEN HONG KY;ZAH CHUNG-EN |
分类号 |
H01L21/00;H01L31/0256 |
主分类号 |
H01L21/00 |
代理机构 |
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