| 摘要 |
<p>A purpose of the present invention is to provide: a radiation-sensitive resin composition for chemical amplification type resists which is capable of attaining a decrease in PEB temperature, has excellent lithographic performance with respect to LWR, DOF, etc. as indices thereto, and fully satisfies both sensitivity, etc., which are the basic properties of resists, and etching resistance; a method for forming a pattern using the composition; a polymer which is for use in the radiation-sensitive resin composition; and a compound. Another purpose of the invention is to provide: a radiation-sensitive resin composition for resist films which, even when subjected to PEB at a low temperature, can be inhibited from developing bridging defects or generating scum and which has excellent LWR performance and can form a satisfactory fine pattern; and a method for forming a pattern using the composition. The radiation-sensitive resin compositions of the invention each comprises [A] a polymer component comprising one or more polymers and [B] a radiation-sensitive acid generator, at least one polymer in the polymer component [A] having a structural unit (I) represented by formula (1).</p> |
