METHOD FOR PRODUCING GaN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a GaN film in which a GaN film having a large principal plane area and a small warp can be produced without causing a substrate to be cracked.

SOLUTION: The method for producing a GaN film includes the steps of: preparing a composite substrate 10; and depositing a GaN film 20 on the principal plane 13m of a single crystal film 13 in the composite substrate 10. The composite substrate 10 includes: a supporting substrate 11 in which the coefficient of thermal expansion in the principal plane 11m is larger than 0.8 times and smaller than 1.0 times the coefficient of thermal expansion in the a-axis direction of a GaN crystal; and a single crystal film 13 arranged on the principal plane 11m side of the supporting substrate 11, wherein the single crystal film 13 is a SiC film with 3-fold symmetry about an axis perpendicular to the principal plane 13m of the single crystal film 13.

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