| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetoresistive memory reducing read disturbance. <P>SOLUTION: A magnetoresistive memory comprises: a magnetoresistive element 1 having a first magnetic layer not changing magnetizing direction, a second magnetic layer changing the magnetizing direction, and an intermediate layer between the first magnetic layer and the second magnetic layer; and a read circuit 2 for distinguishing data stored in the magnetoresistive element by allowing a read pulse current to flow in the magnetoresistive element 1. The read pulse current width is smaller than a period until magnetization in the second magnetic layer starts coherent precession together from an initial state. <P>COPYRIGHT: (C)2012,JPO&INPIT |
