| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic thin-film transistor, in which an element with a large area is easily manufactured, a gate insulation layer is not damaged during forming a source electrode and a drain electrode, and flexibility of an organic insulation material is not deteriorated. <P>SOLUTION: A method for manufacturing an organic thin-film transistor has a step for forming a gate electrode, and a gate insulation layer covering the gate electrode and including an organic insulation material; a step for depositing a first conductive layer made of a conductive material on the gate insulation layer using an application method, an electroless plating method, or an atomic layer deposition method; a step for forming a second conductive layer patterned on the first conductive layer; a step for removing a portion of the first conductive layer not coated with the second conductive layer, and forming a source electrode and a drain electrode including the first conductive layer and the second conductive layer; and a step for forming an organic semiconductor layer to coat the source electrode, the drain electrode, and the gate insulation layer in a region sandwiched between the source electrode and the drain electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
