A METHOD OF TRANSFERRING SILICON BASED LAYER ONTO POLYMER FILM

摘要

The present invention relates to a method of transferring a silicon based layer 101 a onto a polymer film 103 that comprises the steps of: preparing an initial substrate 105a; depositing a silicon-based layer 101 a on the initial substrate 105a; etching the silicon-based layer to form desired micro-nano structure; depositing a TiN layer 111 by RF sputtering; depositing a tungsten layer 109; etching back the tungsten layer 109 to form a planarised surface exposing the TiN layer 111 on the top of the silicon-based layer; removing the exposed portions of TiN 111 off the silicon-based layer 101a, thus forming a planarised surface comprising the silicon-based layer 101a with at least one tungsten plug 109 formed therein; coating a polymer film 103 onto the planarised surface; releasing the initial substrate 105a from the other layers; and removing the at least one tungsten plug 109 and TiN layer 111.