| 摘要 |
A thin film transistor includes a gate (G), a pair of electrodes (S, D), a first semiconductor layer (104) disposed between the gate (G) and the pair of electrodes (S, D), and a semiconductor stacked layer (110) disposed between the first semiconductor layer (104) and the pair of the electrodes (S, D). The semiconductor stacked layer (110) includes a second semiconductor layer (108) disposed adjacent to the pair of electrodes (S, D) and at least one pair of semiconductor layers (106) including a third semiconductor layer (106a) and a fourth semiconductor layer (106b), the third semiconductor layer (106a) being sandwiched between the second semiconductor layer (108) and the fourth semiconductor layer (106b). In particular, the electric conductivity of the third semiconductor layer (106a) is substantially smaller than the electric conductivity of the second semiconductor layer (108) and the electric conductivity of the fourth semiconductor layer (106b).
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