SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent electrical characteristics from deteriorating due to interference between well regions. CONSTITUTION: A substrate(100) is divided into a first region(I) and a second region(II). A first gate structure(152) is formed on the substrate. The first gate structure includes a first gate insulating layer pattern(122), a first gate electrode(132), and a first gate mask(142). A first impurity region(102) is formed on an upper portion of the substrate adjacent to the first gate structure. A second gate structure(154) includes a second gate insulating layer pattern(124), a second gate electrode(134), and a second gate mask(144).