发明名称 |
Integrated semiconductor nonvolatile storage device |
摘要 |
An object of the present invention is to provide an integrated semiconductor nonvolatile storage device that can be read at high speed and reprogrammed an increased number of times. In the case of conventional nonvolatile semiconductor storage devices having a split-gate structure, there is a tradeoff between the read current and the maximum allowable number of reprogramming operations. To overcome this problem, an integrated semiconductor nonvolatile storage device of the present invention is configured such that memory cells having different memory gate lengths are integrated on the same chip. This allows the device to be read at high speed and reprogrammed an increased number of times. |
申请公布号 |
US8193053(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20100763402 |
申请日期 |
2010.04.20 |
申请人 |
HISAMOTO DIGH;KIMURA SHIN'ICHIRO;OKADA DAISKE;YASUI KAN;RENESAS ELECTRONICS CORPORATION |
发明人 |
HISAMOTO DIGH;KIMURA SHIN'ICHIRO;OKADA DAISKE;YASUI KAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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