发明名称 Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device
摘要 An information storage device includes a magnetic layer and a supply unit. The magnetic layer includes a plurality of regions, a first region having a first magnetic anisotropic energy and a second region having a second magnetic anisotropic energy. The first and second regions are arranged alternately, and the second region is doped with impurity ions. The second magnetic anisotropic energy is less than the first magnetic anisotropic energy. The supply unit applies energy to the magnetic layer for moving magnetic domain walls within the magnetic layer.
申请公布号 US8194430(B2) 申请公布日期 2012.06.05
申请号 US20070980425 申请日期 2007.10.31
申请人 LIM CHEE-KHENG;SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM CHEE-KHENG
分类号 G11B5/66 主分类号 G11B5/66
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