发明名称 Method for manufacturing semiconductor device
摘要 In one embodiment, a first substrate having first solder bumps and a second substrate having second solder bumps are stacked while temporarily tacking the solder bumps to each other, and then a stack is disposed inside a furnace. The gas in the furnace is exhausted to be in a reduced pressure atmosphere, and then a carboxylic acid gas is introduced into the furnace. While increasing a temperature inside the furnace where the carboxylic acid gas is introduced, the gas in the furnace is exhausted to be in a reduced pressure atmosphere at a temperature in a range from a reduction temperature of oxide films by the carboxylic acid gas to lower than a melting temperature of the solder bumps. By increasing the temperature inside the furnace up to a temperature in a range of the melting temperature of the solder bumps and higher, the first solder bumps and the second solder bumps are melted and joined.
申请公布号 US8191758(B2) 申请公布日期 2012.06.05
申请号 US20100815693 申请日期 2010.06.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAWADA KANAKO;AOKI HIDEO;KOMUTA NAOYUKI;OGISO KOJI
分类号 B23K31/02;H01L21/44;H05K3/00 主分类号 B23K31/02
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