SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PURPOSE: A silicon carbide semiconductor device and a manufacturing method thereof are provided to increase margin of etching quantity capable of eliminating a damage layer by controlling concentration of impurities low in around the surface of a termination area. CONSTITUTION: A p-type well(3) is formed at the upper side of an n-type epitaxial layer(2). A gate insulating layer(6) is formed at the upper side of the n-type epitaxial layer. A gate electrode(7) is formed at the upper side of the gate insulating layer. An inter-layer insulating film(8) is formed at the upper side of the gate electrode. A source electrode(9) is formed at the upper side of an n-type source area(4) and a p-type contact area.