发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less. |
申请公布号 |
US2012132943(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113204013 |
申请日期 |
2011.08.05 |
申请人 |
HIKOSAKA TOSHIKI;NAGO HAJIME;TACHIBANA KOICHI;ITO TOSHIHIDE;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIKOSAKA TOSHIKI;NAGO HAJIME;TACHIBANA KOICHI;ITO TOSHIHIDE;NUNOUE SHINYA |
分类号 |
H01L33/58 |
主分类号 |
H01L33/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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