| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a piezoelectric thin film element with which a lead-free device having long life and a high piezoelectric constant can be manufactured with a high yield; a method for producing the piezoelectric thin film; and a piezoelectric thin film device. <P>SOLUTION: The piezoelectric thin film element 1 includes: a substrate 10; and a piezoelectric thin film 40 formed on the substrate 10 and having a niobium oxide-based perovskite structure represented by general formula: (Na<SB POS="POST">x</SB>K<SB POS="POST">y</SB>Li<SB POS="POST">z</SB>)NbO<SB POS="POST">3</SB>(0≤x≤1, 0≤y≤1, 0≤z≤0.2 and x+y+z=1). The piezoelectric thin film 40 has: an organic molecule selected from the group consisting of CH<SB POS="POST">4</SB>, C<SB POS="POST">2</SB>H<SB POS="POST">2</SB>, C<SB POS="POST">2</SB>H<SB POS="POST">4</SB>, C<SB POS="POST">2</SB>H<SB POS="POST">6</SB>, C<SB POS="POST">3</SB>H<SB POS="POST">8</SB>, CH<SB POS="POST">3</SB>OH, C<SB POS="POST">2</SB>H<SB POS="POST">5</SB>OH and C<SB POS="POST">2</SB>H<SB POS="POST">4</SB>O<SB POS="POST">2</SB>; a molecule containing a group selected from the group consisting of a hydroxyl group, an acyl group, a carbonyl group, an alkynyl group and a carboxyl group; or a molecule containing a bond selected from the group consisting of an O-H bond, a C-O bond, a C=O bond, a C≡C bond and an O-O bond. <P>COPYRIGHT: (C)2012,JPO&INPIT |
