| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a small sensor size required for up-to-date electronic image applications. <P>SOLUTION: The sensor group includes at least two vertically stacked photosensitive sensors formed on a semiconductor substrate, a first epitaxial layer 311 on one sensor, a second epitaxial layer 315 on the first epitaxial layer, and a plug contact having a bottom portion extending to one sensor through the first epitaxial layer, and an upper portion extending from the bottom portion through the second epitaxial layer. Each of the first epitaxial layer and second epitaxial layer consist, essentially, of a p-type silicon. The bottom portion of the plug contact is a region of the arsenide-diffused first epitaxial layer, and the uppermost portion of the plug contact may be a region of the arsenide-diffused second epitaxial layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
