发明名称 SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.
申请公布号 US2012132907(A1) 申请公布日期 2012.05.31
申请号 US201113303543 申请日期 2011.11.23
申请人 YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;MARUYAMA TETSUNORI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;MARUYAMA TETSUNORI
分类号 H01L29/22;H01L21/34 主分类号 H01L29/22
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