NON-VOLATILE MEMORY DEVICE AND PRODUCTION METHOD THEREOF

摘要

An upright chain memory comprising: a two-level select transistor comprising first select transistors, which are upright transistors disposed in a matrix arrangement, and second select transistors, which are upright transistor formed respectively on the first select transistors; and a plurality of memory cells vertically connected in series on the two-level select transistor. This prevents both of the adjoining select transistors from being selected by their respectively shared gates, makes it possible to independently select a plurality of two-level select transistors respectively, and prevents a reduction in the memory capacity of a non-volatile memory device.