METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS OF PROCESSING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing deterioration of the surface morphology of an Ni-containing film caused by dependence on an under layer and of forming a continuous film in a thin film region, and to provide a method and an apparatus of processing a substrate.

SOLUTION: The method includes: mounting a substrate into a processing vessel; and forming a nickel-containing film having a predetermined film thickness on the substrate by repeating, predetermined number of times, the cycle which includes a step of supplying a raw material including nickel and impurities into the processing vessel and a step of supplying an inert gas into the processing vessel.

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