Light emitting diode having vertical topology

摘要

Disclosed herein is an LED having vertical topology. In particular, provided is an LED having vertical topology which is capable of improving a luminous efficiency and reliability thereof and is also capable of achieving mass productivity, and a method of making the same. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.