发明名称 Photomask blank, Photomask and method of manufacture
摘要 <p>In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.</p>
申请公布号 EP1241524(B1) 申请公布日期 2012.05.30
申请号 EP20020250981 申请日期 2002.02.13
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 SHINAGAWA, TSUTOMU;MARUYAMA, TAMOTSU;KANEKO, HIDEO;KOJIMA, MIKIO;INAZUKI, YUKIO;OKAZAKI, SATOSHI
分类号 G03F1/80;C23C14/06;G03F1/46;G03F1/50;G03F1/54;G03F7/20;H01L21/027 主分类号 G03F1/80
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