发明名称 |
Devices based on SI/nitride structures |
摘要 |
A nitride-based semiconductor device is provided. The nitride-base semiconductor device includes a substrate comprising one or more locally etched regions and a buffer layer comprising one or multiple InAlGaN layers on the substrate. A channel layer includes GaN on the buffer layer. A barrier layer includes one or multiple AlGaN layers on the channel layer. |
申请公布号 |
US8188459(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20090577892 |
申请日期 |
2009.10.13 |
申请人 |
PALACIOS TOMAS;CHUNG JINWOOK;MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
PALACIOS TOMAS;CHUNG JINWOOK |
分类号 |
H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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