| 发明名称 |
Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications |
| 摘要 |
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulating layer therebetween. |
| 申请公布号 |
US8188570(B2) |
申请公布日期 |
2012.05.29 |
| 申请号 |
US20100875398 |
申请日期 |
2010.09.03 |
| 申请人 |
LEVY MAX G.;VOLDMAN STEVEN H.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEVY MAX G.;VOLDMAN STEVEN H. |
| 分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
| 代理机构 |
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