| 摘要 |
An object of the present invention is to provide a silicon single crystal pulling method of accurately controlling the diameter of a silicon single crystal, thereby obtaining a high-quality silicon single crystal with little crystal defect. According to an aspect of the present invention, the pulling step includes: capturing an image of the silicon single crystal using an imaging device; measuring the brightness distribution of a fusing ring generated in the vicinity of a solid-liquid interface between the silicon melt and the silicon single crystal for each image scan line in the image captured by the imaging device; detecting the liquid level of the silicon melt and the position of the solid-liquid interface; and controlling the diameter of the silicon single crystal on the basis of a meniscus height, which is a difference between the liquid level and the position of the solid-liquid interface. |
