| 摘要 |
A semiconductor power chip may have a semiconductor die having a power device fabricated on a substrate thereof, wherein the power device has at least one first contact element, a plurality of second contact elements and a plurality of third contact elements arranged on top of the semiconductor die; a plurality of ball bumps or a loaf bump disposed on each of the plurality of second elements and the plurality of third elements; and at least one ball bump or loaf on the at least one first contact element.
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