| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of via holes which manufactures a via hole structure capable of attaining heat radiation improvement effect by increasing an embedding material to the interior while reducing the number of etching to a semiconductor substrate for via hole formation, and to provide a manufacturing method of a semiconductor element having the via holes. <P>SOLUTION: A metal mask 8 has portions 8a exposed through an opening 23 of a metal mask 10. The metal mask 10 is formed so as to be thicker than the metal mask 8. The thickness of the metal mask 10 is set to a thickness so that etching of an opening 22 reaches a source electrode 1 at the same time as etching in the opening 23 almost reaches a semiconductor device formation layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
