发明名称 |
SELECTIVE EMITTER SOLAR CELLS FORMED BY A HYBRID DIFFUSION AND ION IMPLANTATION PROCESS |
摘要 |
Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.
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申请公布号 |
US2012125416(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201113301372 |
申请日期 |
2011.11.21 |
申请人 |
ROHATGI AJEET;YELUNDUR VIJAY;DAVIS PRESTON;CHANDRASEKARAN VINODH;DAMIANI BEN;SUNIVA, INC. |
发明人 |
ROHATGI AJEET;YELUNDUR VIJAY;DAVIS PRESTON;CHANDRASEKARAN VINODH;DAMIANI BEN |
分类号 |
H01L31/0352;H01L31/0232 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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