| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect an abnormality of an EUV light source in a vacuum case at an early stage, without discharging electricity into the air. <P>SOLUTION: There is provided a semiconductor exposure device comprising: an EUV light source configured to generate plasma under a reduced pressure equal to or lower than an atmospheric pressure and capture EUV light emitted by the plasma; a first optical system configured to lead the EUV light from the EUV light source to a mask on which a desired semiconductor pattern is formed; and a second optical system configured to lead light reflected from the mask or light that has passed through the mask to a sample. The semiconductor exposure device comprises a detection module 180 configured to detect acoustic emission of the light source, and detects an abnormality of the light source based on an output of the detection module 180. <P>COPYRIGHT: (C)2012,JPO&INPIT |
