发明名称 |
NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
A nitride-based semiconductor light-emitting device having enhanced efficiency of carrier injection to a well layer is provided. The nitride-based semiconductor light-emitting device comprises a hexagonal gallium nitride-based semiconductor substrate 5, an n-type gallium nitride-based semiconductor region 7 disposed on the principal surface S1 of the substrate 5, a light-emitting layer 11 having a single-quantum-well structure disposed on the n-type gallium nitride-based semiconductor region 7, and a p-type gallium nitride-based semiconductor region 19 disposed on the light-emitting layer 11. The light-emitting layer 11 is disposed between the n-type gallium nitride-based semiconductor region 7 and the p-type gallium nitride-based semiconductor region 19. The light-emitting layer 11 includes a well layer 15 and barrier layers 13 and 17. The well layer 15 comprises InGaN. The principal surface S1 extends along a reference plane S5 tilting from a plane perpendicular to the c-axis of the hexagonal gallium nitride-based semiconductor at a tilt angle in a range of not less than 63 degrees and not more than 80 degrees or in a range of not less than 100 degrees and not more than 117 degrees. |
申请公布号 |
EP2455988(A1) |
申请公布日期 |
2012.05.23 |
申请号 |
EP20100787665 |
申请日期 |
2010.06.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KYONO TAKASHI;ENYA YOHEI;YOSHIZUMI YUSUKE;AKITA KATSUSHI;SUMITOMO TAKAMICHI;UENO MASAKI |
分类号 |
H01L33/32;H01L33/06;H01L33/16 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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