| 摘要 |
Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.
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