METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A manufacturing method of a semiconductor substrate is provided to project a laser beam on an end part of a semiconductor layer formed on a support substrate, thereby improving adhesive properties of an oxide insulation layer and the support substrate. CONSTITUTION: A semiconductor substrate(53) which includes a damaged region(55) is arranged. An oxide insulation layer(57) is formed on the semiconductor substrate. The semiconductor substrate and a support substrate(51) are welded together by including the oxide insulation layer. A semiconductor layer(59) is formed on the support substrate. A polycrystalline semiconductor region is formed on an end part of the semiconductor layer. An oxide layer formed on the surface of the semiconductor layer is eliminated.