SEMICONDUCTOR DEVICE

摘要

By forming a structure having an n-type semiconductor region (9) with a relatively higher concentration than that of an n--type drift layer (8) on the surface of a region where a connection terminal structure (4) of a semiconductor device that uses silicon carbide is to be formed, and thus forming a structure whereby the n-type semiconductor region (9) surrounds the connection terminal structure (4) from the bottom face to the surface of the end farther from the active region of the terminal structure, it is possible to provide a device with low resistance while ensuring the withstand voltage, or a device with low power loss due to a lowering of the resistance of the elements.