| 摘要 |
<p>A method for improving efficiency of electron beam lithography is provided, which includes the following steps: 1) coating a layer of positive photoresist on the wafer which needs to be patterned, and performing pre-baking; 2) segmenting the pattern data, performing optical exposure to large-sized pattern, and post-baking; 3) developing the positive photoresist; 4) plasma fluorinating; 5) baking and curing; 6) coating electron beam negative photoresist, and performing pre-baking; 7) performing electron beam exposure to fine pattern; 8) post-baking; 9) developing the electron beam negative photoresist, and completing the manufacture of the lithography pattern. Said method can save at least 30%~60% lithography time, thereby greatly improving the lithography efficiency, and reducing the cost, and said method is fully compatible with CMOS process without additional special apparatus.</p> |
