| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce the resistance of a storage node contact by integrating a doped silicon film with a source region in order to increase the effective area of the source region. CONSTITUTION: An embedded gate(BG) is formed at the lower side of a trench. A source region(S) and a drain region(D) are formed on a substrate(10) at both sides of the trench. A doped silicon film(20) is integrated with the source region on the trench. A first insulating film(17) separates the embedded gate and the doped silicon film. A second insulating film(21) separates the drain region and the doped silicon film.
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