发明名称 ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM
摘要 A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.
申请公布号 US2012119166(A1) 申请公布日期 2012.05.17
申请号 US201213360001 申请日期 2012.01.27
申请人 MAYUZUMI YOSHITAKA;MITSUBISHI MATERIALS CORPORATION 发明人 MAYUZUMI YOSHITAKA
分类号 H01B1/08 主分类号 H01B1/08
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