A circuit and method for electrostatic discharge (ESD) protection. The ESD protection circuit includes: a silicon control rectifier (SCR) connected between a first voltage rail and a second voltage rail; one or more diodes connected in series in a forward conduction direction between the first voltage rail and a source of a p-channel field effect transistor (PFET); a drain of the PFET connected to the SCR and connected to ground through a current trigger device; and a control circuit connected to the gate of the PFET.
申请公布号
US2012120531(A1)
申请公布日期
2012.05.17
申请号
US20100943980
申请日期
2010.11.11
申请人
ABOU-KHALIL MICHEL J.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
ABOU-KHALIL MICHEL J.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.