PHOTOELECTRIC CONVERSION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of reducing a leakage current and improving a numerical aperture of a photodiode.

SOLUTION: A photoelectric conversion device has: a channel stop layer 105 formed of a second conductivity type semiconductor provided between a pair of adjacent photodiodes each having a region 102 formed of a first conductivity type semiconductor; an element isolation insulating film 103 provided on the channel stop layer 105; and an insulating film 104 provided on a surface of the photodiode and having a thickness thinner than that of the element isolation insulating film. In the photoelectric conversion device, an interface between the photodiode and the insulating film 104, and an interface between the channel stop layer 105 and the element isolation insulating film 103 exist on a plane at the same level. The first conductivity type semiconductor region 102 and the channel stop layer 105 are in contact with each other.

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