| 摘要 |
PURPOSE:To enable configuration control of an X-ray mask absorber by controlling a sidewall angle of a resist pattern using dispersed X-ray during formation of the resist pattern. CONSTITUTION:A surface light emitting X-ray source 7 is used as an X-ray source. When exposure is carried out, half-shaded unsharp delta is caused. As a result of the generation of the half-shaded unsharp, for example, if exposure is carried out immediately below an X-ray source and development is carried out using a high resolution negative resist as a resist, a resist pattern 2 is shaped to a trapezoid. Meanwhile, when a positive resist is used, the resist pattern 2 is shaped to a reverse-trapezoid. Therefore, a sidewall angle of the resist pattern can be freely changed by an emission area of an X-ray source and a distance between the X-ray source and a mask, thereby enabling easy control. |
