| 摘要 |
PURPOSE: A nitride based semiconductor device and a fabricating method thereof are provided to simplify manufacturing processes by manufacturing a nitride based semiconductor device only with etching and growth without a heat diffusion process and an ion implantation process. CONSTITUTION: A substrate(201), on which a nitride based semiconductor is grown up, is prepared. A first oxide film(202-b) selectively etched is formed on the substrate. A contact layer including a plurality of nitride based semiconductor layers(203,204,205) is formed on a partial region. A second oxide film(206-a) is formed on the substrate on which the contact layer is formed. Electrode layers(207,208,209) are formed on the substrate.
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