| 摘要 |
<p>The optical storage medium comprises a substrate layer (52), a read-only data layer (52a) with a pit structure disposed on the substrate layer, and a nonlinear layer (54, 56) with a super-resolution structure disposed above the data layer (52a), which super-resolution structure includes a semiconductor material and grainy impurities of a dielectric material (55), wherein the semiconductor material has an increased reflectivity, when irradiated with a laser beam, and wherein the dielectric material (55) is arranged as a dielectric layer (55) having a thickness below 5 nm. The dielectric material consists advantageously of an inhomogeneous layer of a nitride material, for example GeN, arranged between a first and a second nonlinear layer (54, 56).</p> |
