| 摘要 |
<p>PURPOSE: A semiconductor device is provided to minimize the damage of a wafer test, a chip test, and an assembly time cell by forming a silicide film with a film in which intensity is higher than aluminum. CONSTITUTION: An n+ buffer layer(2) is formed on a p-collector layer(1). An n- drift layer(3) is formed on the n+ buffer layer. A gate electrode(11) consisting of poly-silicon is formed on the surface of the n- drift layer. An emitter electrode(7) is formed on the gate electrode. The emitter electrode is formed into a silicide film which is partitioned into a plurality of lines shape. An insulation film is formed on the silicide film. An electrode pad consisting of aluminum is formed on the insulation film. The electrode pad is used as a gate pad. A gate wiring electrically connects the gate pad and the gate electrode.</p> |
