| 摘要 |
A method for producing a heterocontact, which has a double buffer layer that is free from phase shift and comprises at least ZnO, between an active chalcogenide-based semiconductor layer and a ZnO window contact layer is to be provided, which comprises no wet-chemical process steps and in particular fits in an inline production process for CIS thin-film solar arrays, while not requiring the use of CdS for the buffer layer and forms no excess CuS on the surface. The solution according to the invention provides for the production of a direct heterocontact between a chalcogenide-based semiconductor layer and a ZnO window contact layer by means of a MOMBE method, said heterocontact comprises a buffer layer made of ZnX, where X = S, Se, Te, and ZnO, made of two partial layers free from phase shift.
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