| 摘要 |
PURPOSE: A gallium nitride based semiconductor light emitting device is provided to improve luminous efficiency since strain is minimized when a gallium nitride based semiconductor layer grows. CONSTITUTION: An active layer(120) including a quantum barrier layer(121) and an InGaN(Indium Gallium Nitride) quantum-well layer(122) is formed on a p-GaN layer(110). A strain buffer layer(130) is formed on the InGaN quantum-well layer. The strain buffer layer includes more indium than the active layer. An n-GaN layer(140) is formed on the strain buffer layer. A P electrode(150) and an N electrode(160) are respectively formed on the p-GaN layer and the n-GaN layer.
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