| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a fin-type field effect transistor, which facilitates alignment of contact holes and has low contact resistance. <P>SOLUTION: A semiconductor device provided with a fin-type field effect transistor has a slanted portion 510 whose width is greater than the width of a semiconductor region 502 at least in the widest portion of a source/drain region 503. The width of the slanted portion 510 continuously increases toward the substrate side from the top side of the source/drain region 503. A silicide film 504 is formed on a surface of the slanted portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
