| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve luminous efficiency, reliability, and productivity by separating a substrate without stress and impact by a chemical etching method. CONSTITUTION: A first mask layer(3) is formed on a substrate(1). A second mask layer(5) is formed on the first mask layer. A pattern structure including an opening area is formed by patterning the first mask layer and the second mask layer. A bottom buffer layer(13) is formed on the opening area. A top buffer layer(15) is formed on the bottom buffer layer to cover the second mask layer and the bottom buffer layer. A main layer structure(16) comprising a semiconductor device is formed on the top buffer layer. |
